IXDI514 / IXDN514
PIN CONFIGURATIONS
8 PIN DIP (PI)
8 PIN SOIC (SIA)
8 PIN DIP (PI)
8 PIN SOIC (SIA)
VCC
1
I
8
VCC
VCC
1
I
8
VCC
X
X
IN
2
D
7
OUT
IN
2
D
7
OUT
I
N
NC
GND
3
4
5
1
4
6
5
OUT
GND
NC
GND
3
4
5
1
4
6
5
OUT
GND
6 LEAD DFN (D1)
(Bottom View)
6 LEAD DFN (D1)
(Bottom View)
VCC 6
I
X
1 IN
VCC 6
I
X
1 IN
D
D
OUT 5
I
2 N/C
OUT 5
N
2 N/C
5
5
GND
4
1
4
3 GND
GND
4
1
4
3 GND
NOTE: Solder tabs on bottoms of DFN packages are grounded
Supply Bypassing, Grounding Practices And Output Lead inductance
When designing a circuit to drive a high speed MOSFET
utilizing the IXD_514, it is very important to observe certain
design criteria in order to optimize performance of the driver.
Particular attention needs to be paid to Supply Bypassing ,
Grounding , and minimizing the Output Lead Inductance .
Say, for example, we are using the IXD_514 to charge a 5000pF
capacitive load from 0 to 25 volts in 25ns .
Using the formula: I= ? V C / ? t, where ? V=25V C=5000pF &
? t=25ns, we can determine that to charge 5000pF to 25 volts
in 25ns will take a constant current of 5A. (In reality, the charging
current won’t be constant, and will peak somewhere around
8A).
SUPPLY BYPASSING
In order for our design to turn the load on properly, the IXD_514
must be able to draw this 5A of current from the power supply
in the 25ns. This means that there must be very low impedance
between the driver and the power supply. The most common
method of achieving this low impedance is to bypass the power
supply at the driver with a capacitance value that is an order of
magnitude larger than the load capacitance. Usually, this
would be achieved by placing two different types of bypassing
capacitors, with complementary impedance curves, very close
to the driver itself. (These capacitors should be carefully
selected and should have low inductance, low resistance and
high-pulse current-service ratings). Lead lengths may radiate
at high frequency due to inductance, so care should be taken
to keep the lengths of the leads between these bypass
capacitors and the IXD_514 to an absolute minimum.
11
GROUNDING
In order for the design to turn the load off properly, the IXD_514
must be able to drain this 5A of current into an adequate
grounding system. There are three paths for returning current
that need to be considered: Path #1 is between the IXD_514
and its load. Path #2 is between the IXD_514 and its power
supply. Path #3 is between the IXD_514 and whatever logic is
driving it. All three of these paths should be as low in resistance
and inductance as possible, and thus as short as practical. In
addition, every effort should be made to keep these three
ground paths distinctly separate. Otherwise, the returning
ground current from the load may develop a voltage that would
have a detrimental effect on the logic line driving the IXD_514.
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and Grounding are
issues related to the Output Lead Inductance. Every effort
should be made to keep the leads between the driver and its
load as short and wide as possible. If the driver must be placed
farther than 2” (5mm) from the load, then the output leads
should be treated as transmission lines. In this case, a twisted-
pair should be considered, and the return line of each twisted
pair should be placed as close as possible to the ground pin
of the driver, and connected directly to the ground terminal of the
load.
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相关代理商/技术参数
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IXDN602D2TR 功能描述:IC GATE DVR 2A DUAL HS 8DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件
IXDN602PI 功能描述:MOSFET N-CH 2A DUAL LO SIDE 8-DI RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:95 系列:- 配置:高端和低端,独立 输入类型:非反相 延迟时间:160ns 电流 - 峰:290mA 配置数:1 输出数:2 高端电压 - 最大(自引导启动):600V 电源电压:10 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:管件 产品目录页面:1381 (CN2011-ZH PDF)
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